| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -2.50 A |
| Case/Package | TO-261-4 |
| Power Rating | 3 W |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.095 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3 W |
| Threshold Voltage | 2.6 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | -60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 2.50 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 601pF @30V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDT2955 from Fairchild is a surface mount, 60V P channel enhancement mode field effect transistors in SOT-223 package. Transistor is produced using Fairchild"s high voltage trench process and suitable for power management applications.
● High density cell design for extremely low Rds(ON)
● Drain to source voltage (Vds) of -60V
● Gate to source voltage of ±20V
● Continuous drain current (Id) of -2.5A
● Power dissipation (pd) of 3W
● Low on state resistance of 163mohm at Vgs -4.5V
● Operating temperature range -55°C to 150°C
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