| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.03 Ω |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 720pF @15V(Vds) |
| Input Power (Max) | 1.1 W |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.7 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The NDT451AN is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. It is particularly suited for low voltage applications such as DC-to-DC conversion where fast switching, low in-line power loss and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
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