| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.038 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 3.16 A |
| Rise Time | 12 ns |
| Input Capacitance (Ciss) | 305pF @15V(Vds) |
| Input Power (Max) | 750 mW |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1250 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
| Minimum Packing Quantity | 3000 |
The SI2306BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● 100% Rg tested
● -55 to 150°C Operating temperature range
VISHAY
5 Pages / 0.1 MByte
VISHAY
10 Pages / 0.24 MByte
VISHAY
2 Pages / 0.09 MByte
VISHAY
SOT-23-3 N-CH 30V 3.16A 47mΩ
Vishay Semiconductor
MOSFET, N-Ch., 30V(D-S), 0.047Ω @ 10V(GS), 4A, TO-236 (SOT-23)
VISHAY
SOT-23-3 N-CH 30V 3.16A 47mΩ
Vishay Siliconix
MOSFET, N-Ch., 30V(D-S), 0.047Ω @ 10V(GS), 4A, TO-236 (SOT-23)
Vishay Siliconix
Trans MOSFET N-CH 30V 3.16A 3Pin TO-236 T/R
Vishay Semiconductor
MOSFET 30V 4A 1.25W 47mohm @ 4.5V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
