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SI2306BDS-T1-GE3
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SI2306BDS-T1-GE3 Datasheet PDF - Vishay Semiconductor

Manufacturer:Vishay Semiconductor
Category:MOSFETs
Case Package:TO-236
Description:MOSFET 30V 4A 1.25W 47mohm @ 4.5V
Documentation:SI2306BDS-T1-GE3 Datasheet (9 Pages)
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SI2306BDS-T1-GE3 Datasheet PDF (9 Pages)
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SI2306BDS-T1-GE3 Specifications

TYPEDESCRIPTION
Number of Pins3 Pin
Case/PackageTO-236
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.065 Ω
PolarityN-Channel
Power Dissipation750 mW
Threshold Voltage3 V
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)4.00 A
Fall Time6 ns
Operating Temperature (Max)150 ℃
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SI2306BDS-T1-GE3 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
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SI2306BDS-T1-GE3 Documents

SI2306BDS-T1-GE3 Datasheet
Vishay Semiconductor
9 Pages / 0.2 MByte
SI2306BDS-T1-GE3 Other Datasheet PDF
Vishay Semiconductor
8 Pages / 0.2 MByte
SI2306BDS-T1-GE3 Notice File
Vishay Semiconductor
2 Pages / 0.09 MByte

SI2306BDST1 Documents

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SI2306BDS-T1-GE3 Datasheet PDF
VISHAY
SOT-23-3 N-CH 30V 3.16A 47mΩ
SI2306BDS-T1-E3 Datasheet PDF
Vishay Siliconix
MOSFET, N-Ch., 30V(D-S), 0.047Ω @ 10V(GS), 4A, TO-236 (SOT-23)
SI2306BDS-T1-GE3 Datasheet PDF
Vishay Siliconix
Trans MOSFET N-CH 30V 3.16A 3Pin TO-236 T/R
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MOSFET 30V 4A 1.25W 47mohm @ 4.5V
SI2306BDS-T1-E3 Datasheet PDF
Vishay Intertechnology
SI2306BDS-T1-GE3 Datasheet PDF
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