| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-236 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.038 Ω |
| Polarity | N-Channel |
| Power Dissipation | 1.25 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 3.16 A |
| Rise Time | 12 ns |
| Thermal Resistance | 100℃/W (RθJA) |
| Input Capacitance (Ciss) | 305pF @15V(Vds) |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 0.75 W |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.04 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1.02 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The SI2306BDS-T1-E3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET with antiparallel diode.
● 100% Rg tested
● -55 to 150°C Operating temperature range
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