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SI2306BDS-T1-GE3
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SI2306BDS-T1-GE3 Datasheet PDF - Vishay Siliconix

Manufacturer:Vishay Siliconix
Category:MOSFETs
Case Package:SOT-23-3
Description:Trans MOSFET N-CH 30V 3.16A 3Pin TO-236 T/R
Documentation:SI2306BDS-T1-GE3 Datasheet (8 Pages)Package Outline Dimension on5 Page6 Page
Part Numbering System on1 Page
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SI2306BDS-T1-GE3 Datasheet PDF (8 Pages)
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SI2306BDS-T1-GE3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageSOT-23-3
PolarityN-Channel
Power Dissipation750mW (Ta)
Drain to Source Voltage (Vds)30 V
Continuous Drain Current (Ids)4.00 A
Input Capacitance (Ciss)305pF @15V(Vds)
Power Dissipation (Max)750mW (Ta)
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SI2306BDS-T1-GE3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature-55℃ ~ 150℃ (TJ)
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SI2306BDS-T1-GE3 Documents

SI2306BDS-T1-GE3 Datasheet
Vishay Siliconix
8 Pages / 0.2 MByte
SI2306BDS-T1-GE3 Other Datasheet PDF
Vishay Siliconix
8 Pages / 0.2 MByte

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SI2306BDS-T1-GE3 Datasheet PDF
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