| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 535 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 256 ns |
| Input Power (Max) | 535 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 535 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.25 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This fast-switching NGTB50N120FL2WG IGBT transistor from ON Semiconductor will be perfect in your circuit. Its maximum power dissipation is 535000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This device is made with field stop ii|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C.
ON Semiconductor
8 Pages / 0.1 MByte
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
4 Pages / 0.16 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 535000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 200A 536000mW 3Pin(3+Tab) TO-247 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
