| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 20.0 V |
| Current Rating | 3.10 A |
| Case/Package (SI) | 3216 |
| Case/Package | 1206 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.058 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 1.1 W |
| Threshold Voltage | 600 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | 3.90 A |
| Rise Time | 13.0 ns |
| Input Capacitance (Ciss) | 180pF @10V(Vds) |
| Input Power (Max) | 1.1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.1 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
As an alternative to traditional transistors, the NTHC5513T1G power MOSFET from ON Semiconductor can be used to both amplify and switch electronic signals. Its maximum power dissipation is 1100 mW. In order to ensure safe delivery and enable quick mounting of this component after delivery, it will be encased in tape and reel packaging during shipment. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This N|P channel MOSFET transistor operates in enhancement mode.
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