NTD110N02RT4G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-252-3
Description:	Power MOSFET 24V 110A 4.6mOhm Single N-Channel DPAK, DPAK 4 LEAD Single Gauge Surface Mount, 2500-REEL
Documentation:	NTD110N02RT4G Datasheet (6 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on6 Page Package Footprint Pad Layout on6 Page Part Numbering System on1 Page 5 Page 6 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD110N02RT4G Specifications

TYPE	DESCRIPTION
Mounting Style	Surface Mount
Number of Pins	3 Pin
Voltage Rating (DC)	24.0 V
Current Rating	110 A
Case/Package	TO-252-3
Number of Channels	1 Channel
Number of Positions	3 Position
Drain to Source Resistance (on) (Rds)	0.0041 Ω
Polarity	N-Channel
Power Dissipation	110 W
Threshold Voltage	1.5 V
Input Capacitance	3.44 nF
Gate Charge	28.0 nC
Drain to Source Voltage (Vds)	24 V
Breakdown Voltage (Drain to Source)	24 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	110 A
Rise Time	39 ns
Input Capacitance (Ciss)	3440pF @20V(Vds)
Input Power (Max)	1.5 W
Fall Time	21 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	1.5W (Ta), 110W (Tc)