NTD18N06-1G Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-251-3
Description:	IPAK N-CH 60V 18A
Documentation:	NTD18N06-1G Datasheet (9 Pages)Package Outline Dimension on8 Page 9 Page Package Footprint Pad Layout on8 Page Part Numbering System on1 Page 7 Page 9 Page NTD18N06-1G Application Note (9 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTD18N06-1G Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	60.0 V
Current Rating	18.0 A
Case/Package	TO-251-3
Drain to Source Resistance (on) (Rds)	51.0 mΩ
Polarity	N-Channel
Power Dissipation	55 W
Input Capacitance	710 pF
Gate Charge	30.0 nC
Drain to Source Voltage (Vds)	60 V
Breakdown Voltage (Drain to Source)	60.0 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	18.0 A
Rise Time	23 ns
Input Capacitance (Ciss)	710pF @25V(Vds)
Input Power (Max)	55 W
Fall Time	20 ns
Operating Temperature (Max)	175 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	2.1 W