| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 18.0 A |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 51 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 55 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 18.0 A |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 710pF @25V(Vds) |
| Input Power (Max) | 55 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.1 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
This NTD18N06T4G power MOSFET from ON Semiconductor can be used for amplification in your circuit. Its maximum power dissipation is 55000 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C. This N channel MOSFET transistor operates in enhancement mode.
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