| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | XLLGA-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.4 Ω |
| Polarity | N-CH |
| Power Dissipation | 120 mW |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 0.224A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 15.8pF @15V(Vds) |
| Fall Time | 110 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 120mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the NTNS3193NZT5G power MOSFET, developed by ON Semiconductor. Its maximum power dissipation is 139 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
7 Pages / 0.13 MByte
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