| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 200 V |
| Current Rating | 30.0 A |
| Case/Package | TO-220 |
| Drain to Source Resistance (on) (Rds) | 68.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 214 W |
| Drain to Source Voltage (Vds) | 200 V |
| Breakdown Voltage (Drain to Source) | 200 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 20.0 ns |
| Input Capacitance (Ciss) | 2335pF @25V(Vds) |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 214000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
N−Channel Enhancement−Mode TO−220
●30 AMPERES 200 VOLTS 68 m @ VGS= 10 V (Typ)
●Features
●•Source−to−Drain Diode Recovery Time Comparable to a Discrete
●Fast Recovery Diode
●•Avalanche Energy Specified
●•IDSSand RDS(on)Specified at Elevated Temperature
●•Pb−Free Package is Available
●Applications
●•PWM Motor Controls
●•Power Supplies
●•Converters
ON Semiconductor
7 Pages / 0.14 MByte
ON Semiconductor
8 Pages / 0.29 MByte
ON Semiconductor
MOSFET N-CH 60V 30A TO220AB
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