NTY100N10 Datasheet PDF - ON Semiconductor

Manufacturer:	ON Semiconductor
Category:	MOSFETs
Case Package:	TO-264-3
Description:	TO-3BPL N-CH 100V 123A
Documentation:	NTY100N10 Datasheet (8 Pages)Pinout Diagram on1 PageHot Package Outline Dimension on8 Page Part Numbering System on1 Page 8 Page
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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NTY100N10 Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Voltage Rating (DC)	100 V
Current Rating	123 A
Case/Package	TO-264-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	9 mΩ
Polarity	N-Channel
Power Dissipation	313 W
Input Capacitance	10.1 nF
Gate Charge	350 nC
Drain to Source Voltage (Vds)	100 V
Breakdown Voltage (Drain to Source)	100 V
Breakdown Voltage (Gate to Source)	±20.0 V
Continuous Drain Current (Ids)	123 A
Rise Time	150 ns
Input Capacitance (Ciss)	10110pF @25V(Vds)
Input Power (Max)	313 W
Fall Time	250 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	55 ℃
Power Dissipation (Max)	313W (Tc)