TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 250 mA |
Case/Package | TO-92-3 |
Drain to Source Resistance (on) (Rds) | 6.40 Ω |
Polarity | N-Channel |
Power Dissipation | 350 mW |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 250 mA |
Input Capacitance (Ciss) | 60pF @25V(Vds) |
Input Power (Max) | 350 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 350mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Length | 5.2 mm |
Size-Width | 4.19 mm |
Size-Height | 5.33 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Small Signal MOSFET 250 mAmps, 200 Volts
●N-Channel TO-92
●250 mAMPS, 200 VOLTS
●RDS(on)= 14 (BS107) RDS(on)= 6.4 (BS107A)
●Features
●•AEC Qualified
●•PPAP Capable
●•Pb-Free Package is Available
ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
17 Pages / 0.27 MByte
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