| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 15.0 V |
| Current Rating | 50.0 mA |
| Case/Package | TO-226-3 |
| Power Dissipation | 350 mW |
| Input Capacitance | 2pF (Max) |
| Breakdown Voltage (Collector to Emitter) | 15 V |
| hFE Min | 20 @8mA, 10V |
| Input Power (Max) | 350 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 350 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Box |
| Material | Silicon |
| Size-Height | 7.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor NPN 15V 50mA 600MHz 350mW Through Hole TO-92-3
ON Semiconductor
3 Pages / 0.04 MByte
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