| TYPE | DESCRIPTION |
|---|
| Number of Pins | 5 Pin |
| Case/Package | SO-8FL |
| Number of Positions | 5 Position |
| Drain to Source Resistance (on) (Rds) | 0.0032 Ω |
| Power Dissipation | 200 W |
| Rise Time | 860 ns |
| Input Capacitance (Ciss) | 7400pF @20V(Vds) |
| Fall Time | 740 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
Automotive Power MOSFET in a 5 x 6 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.
●Features | | Benefits
●---|---|---
● | | | | |
● Small Footprint (5 x 6 mm)
●| |
● Compact Design
● Low RDS(on)
●| |
● Minimize Conduction Losses
● AEC-Q101 qualified and PPAP capable
●| |
● Suitable for Automotive Applications
● Pb-Free and RoHS compliance
●| |
● Environmental Consideration
ON Semiconductor
8 Pages / 0.34 MByte
ON Semiconductor
2 Pages / 0.02 MByte
ON Semiconductor
Power MOSFET, -40V, 4.2mΩ, -140A, Single P-Channel
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