| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 30 MHz |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 300 mW |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| Continuous Collector Current | 0.5A |
| hFE Min | 10 @300mA, 10V |
| hFE Max | 100 @50mA, 10V |
| Input Power (Max) | 300 mW |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The PBHV8540T,215 is a 0.5A NPN breakthrough-in small signal (BISS) Transistor in a medium power surface-mount plastic package.
● High voltage
● Low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● AEC-Q101 qualified
● PNP complement is PBHV9040T
● W4 Marking code
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