| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Power Dissipation | 250 mW |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| hFE Min | 230 @300mA, 5V |
| hFE Max | 270 |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 570 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.4 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The PBRP123YT is a 800mA PNP breakthrough-in small signal (BISS) Resistor Equipped Transistor (RET) in a small surface-mount plastic package.
● High current gain hFE
● Built-in bias resistors
● Simplifies circuit design
● Low collector-emitter saturation voltage VCEsat
● Reduces component count
● Reduces pick and place costs
● ±10% Resistor ratio tolerance
● NPN complement is PBRN123YT
● 7Q Marking code
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