| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Power Rating | 1.4 W |
| Number of Positions | 8 Position |
| Power Dissipation | 0.73 W |
| Gain Bandwidth Product | 130 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 150 @4A, 2V |
| Input Power (Max) | 2.3 W |
| DC Current Gain (hFE) | 300 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 150℃ (TJ) |
The PBSS4041SN is a dual NPN breakthrough-in small signal (BISS) Bipolar Transistor Array in a medium power surface-mount plastic package. It is suitable for use in battery-driven devices, charging circuits, load-switch and power switches. It utilizes required smaller printed-circuit board (PCB) area than for conventional transistors.
● Very low collector-emitter saturation voltage VCEsat
● High collector current capability IC and ICM
● High collector current gain (hFE) at high IC
● High efficiency due to less heat generation
● PBSS4041SP dual PNP complement
● PBSS4041SPN NPN-PNP complement
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