TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 100 MHz |
Number of Pins | 3 Pin |
Case/Package | SOT-89-3 |
Number of Positions | 3 Position |
Polarity | PNP |
Power Dissipation | 550 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 2A |
hFE Min | 200 @1A, 2V |
Input Power (Max) | 1 W |
DC Current Gain (hFE) | 200 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 1000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 4.6 mm |
Size-Width | 2.6 mm |
Size-Height | 1.6 mm |
Operating Temperature | -65℃ ~ 150℃ |
The PBSS5250X,115 is a 2A PNP breakthrough-in small signal (BISS) Transistor housed in a surface-mount plastic package. It offers collector pad for good heat transfer.
● Low collector-emitter saturation voltage VCEsat
● High collector current capabilities are IC and ICM
● Higher efficiency leading to less heat generation
● Reduced printed-circuit board requirements
● NPN complement is PBSS4250X
● 1L Marking code
NXP
206 Pages / 0.21 MByte
Nexperia
PBSS5250TH/SOT23/TO-236AB
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