TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-226-3 |
Breakdown Voltage (Collector to Emitter) | 60 V |
hFE Min | 250 @100µA, 5V |
Input Power (Max) | 625 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 625 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Bulk |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Bipolar (BJT) Transistor PNP 60V 500mA 625mW Through Hole TO-92-3
ON Semiconductor
7 Pages / 0.28 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Fairchild
Trans GP BJT PNP 40V 0.5A 3Pin TO-92 Bulk
Central Semiconductor
Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
Central Semiconductor
Trans GP BJT PNP 60V 0.5A 3Pin TO-92 Box
Fairchild
Trans GP BJT PNP 60V 0.5A 3Pin TO-92 Bulk
Fairchild
Trans GP BJT PNP 40V 0.5A 3Pin TO-92 T/R
Fairchild
Trans GP BJT PNP 40V 0.5A 3Pin TO-92 Ammo
Fairchild
Trans GP BJT PNP 40V 0.5A 3Pin TO-92 Ammo
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