| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | SOT-363 |
| Number of Positions | 6 Position |
| Polarity | NPN, PNP |
| Power Dissipation | 200 mW |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 30 |
| DC Current Gain (hFE) | 30 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Cut Tape (CT) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -65℃ ~ 150℃ |
The PUMD3 is a NPN-PNP Resistor Equipped Transistor Array in a surface-mount plastic package. This bipolar device is suitable for low current peripheral driver, control of IC inputs and replaces general-purpose transistors in digital applications.
● Built-in bias resistors
● Simplifies circuit design
● Reduces component count
● PUMB11 dual PNP complement
● PUMH11 dual NPN complement
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