| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 75 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | 2.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Polarity | PNP, P-Channel |
| Power Dissipation | 800 mW |
| Gain Bandwidth Product | 75 MHz |
| Breakdown Voltage (Collector to Emitter) | 60 V |
| hFE Min | 75 @1A, 2V |
| Input Power (Max) | 800 mW |
| DC Current Gain (hFE) | 75 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 800 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.5 mm |
| Size-Width | 3.5 mm |
| Size-Height | 1.57 mm |
| Operating Temperature | 150℃ (TJ) |
Design various electronic circuits with this versatile PNP PZT751T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 800 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C.
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