TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 4 Pin |
Supply Voltage (DC) | 1.70 V |
Voltage Rating (DC) | 30.0 V |
Operating Voltage | 1.70 V |
Case/Package | PCB Mount |
Output Voltage | 30.0 V |
Number of Channels | 2 Channel |
Forward Voltage | 1.7 V |
Wavelength | 940 nm |
Input Current | 40.0 mA |
Peak Wavelength | 940 nm |
Power Dissipation | 100 mW |
Rise Time | 8.00 µs |
Breakdown Voltage (Collector to Emitter) | 30 V |
Forward Current | 50 mA |
Forward Current (Max) | 50 mA |
Fall Time | 8 µs |
Fall Time (Max) | 8000 ns |
Fall Time (Max) | 8000 ns |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Bulk |
Size-Height | 22.94 mm |
Operating Temperature | -40℃ ~ 85℃ |
DESCRIPTION
●The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic housing. The phototransistor responds to radiation from the emitting diode only when a reflective object passes within its field of view. The area of the optimum response approximates a circle .200" in diameter.
●FEATURES
●• No contact surface sensing
●• Phototransistor output
●• Focused for sensing specular reflection
●• Daylight filter on photosensor
●• Dust cover
Fairchild
4 Pages / 0.31 MByte
Fairchild
4 Pages / 0.3 MByte
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