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SCT2H12NYTB
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SCT2H12NYTB Datasheet PDF - ROHM Semiconductor

Manufacturer:ROHM Semiconductor
Category:MOSFETs
Case Package:TO-268-3
Description:TO-268L N-CH 1700V 4A
Documentation:SCT2H12NYTB Datasheet (16 Pages)SCT2H12NYTB Application Note (41 Pages)
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SCT2H12NYTB Datasheet PDF (16 Pages)
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SCT2H12NYTB Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-268-3
Number of Positions2 Position
Drain to Source Resistance (on) (Rds)1.15 Ω
PolarityN-CH
Power Dissipation44 W
Threshold Voltage2.8 V
Drain to Source Voltage (Vds)1700 V
Continuous Drain Current (Ids)4A
Rise Time21 ns
Input Capacitance (Ciss)184pF @800V(Vds)
Fall Time74 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)44W (Tc)
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SCT2H12NYTB Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Operating Temperature175℃ (TJ)
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SCT2H12NYTB Documents

SCT2H12NYTB Datasheet
ROHM Semiconductor
16 Pages / 0.83 MByte
SCT2H12NYTB Other Datasheet PDF
ROHM Semiconductor
15 Pages / 1.07 MByte
SCT2H12NYTB Application Note
ROHM Semiconductor
41 Pages / 0.88 MByte

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SCT2H12NYTB Datasheet PDF
ROHM Semiconductor
TO-268L N-CH 1700V 4A
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