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SI2318DS-T1-E3
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SI2318DS-T1-E3 Datasheet PDF - Vishay Siliconix

Manufacturer:Vishay Siliconix
Category:MOSFETs
Case Package:SOT-23-3
Description:MOSFET N-CH 40V 3A SOT23-3
Documentation:SI2318DS-T1-E3 Datasheet (5 Pages)Part Numbering System on1 Page
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SI2318DS-T1-E3 Datasheet PDF (5 Pages)
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SI2318DS-T1-E3 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageSOT-23-3
Drain to Source Resistance (on) (Rds)0.058 Ω
Power Dissipation1.25 W
Input Capacitance540pF @20V
Drain to Source Voltage (Vds)40 V
Breakdown Voltage (Drain to Source)40 V
Thermal Resistance100℃/W (RθJA)
Input Capacitance (Ciss)540pF @20V(Vds)
Fall Time25 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)750mW (Ta)
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SI2318DS-T1-E3 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingCut Tape (CT)
Size-Length3.04 mm
Size-Width1.6 mm
Size-Height1.45 mm
Operating Temperature-55℃ ~ 150℃
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SI2318DS-T1-E3 Documents

SI2318DS-T1-E3 Datasheet
Vishay Siliconix
5 Pages / 0.08 MByte
SI2318DS-T1-E3 Other Datasheet PDF
Vishay Siliconix
8 Pages / 0.18 MByte
SI2318DS-T1-E3 Other References
Vishay Siliconix
1 Pages / 0.12 MByte

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