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SPB11N60S5
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SPB11N60S5 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-252-3
Description:D2PAK N-CH 600V 11A
Documentation:SPB11N60S5 Datasheet (11 Pages)Part Numbering System on1 Page
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SPB11N60S5 Datasheet PDF (11 Pages)
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SPB11N60S5 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Voltage Rating (DC)600 V
Current Rating11.0 A
Case/PackageTO-252-3
PolarityN-CH
Power Dissipation125000 mW
Input Capacitance1.46 nF
Gate Charge54.0 nC
Drain to Source Voltage (Vds)600 V
Continuous Drain Current (Ids)11.0 A
Rise Time35 ns
Input Capacitance (Ciss)1460pF @25V(Vds)
Input Power (Max)125 W
Fall Time20 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
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SPB11N60S5 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTape & Reel (TR)
Size-Length10 mm
Size-Width9.25 mm
Size-Height4.4 mm
Operating Temperature-55℃ ~ 150℃
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SPB11N60S5 Documents

SPB11N60S5 Datasheet
Infineon
11 Pages / 0.67 MByte

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Siemens Semiconductor
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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