| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-126-3 |
| Power Dissipation | 20 W |
| Breakdown Voltage (Collector to Emitter) | 400 V |
| hFE Min | 6 @500mA, 2V |
| Input Power (Max) | 20 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 20000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Bag |
| Operating Temperature | 150℃ (TJ) |
The three terminals of this NPN ST13003DN GP BJT from STMicroelectronics give it the ability to be used as either an electronic switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 9 V. Its maximum power dissipation is 20000 mW. It has a maximum collector emitter voltage of 400 V and a maximum emitter base voltage of 9 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
8 Pages / 0.15 MByte
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