TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 550 V |
Current Rating | 12.0 A |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.3 Ω |
Polarity | N-Channel |
Power Dissipation | 160 W |
Threshold Voltage | 4 V |
Input Capacitance | 1.00 nF |
Gate Charge | 39.0 nC |
Drain to Source Voltage (Vds) | 550 V |
Breakdown Voltage (Drain to Source) | 500 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 1000pF @25V(Vds) |
Input Power (Max) | 160 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 160W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10.4 mm |
Size-Width | 9.35 mm |
Size-Height | 4.6 mm |
Operating Temperature | -65℃ ~ 150℃ (TJ) |
The STB12NM50T4 is a MDmesh™ N-channel Power MOSFET designed as MOSFET technology that associates the multiple drain process with PowerMESH™ horizontal layout. The device has an outstanding low ON-resistance, impressively high dV/dt and excellent avalanche characteristics.
● High dV/dt and avalanche capabilities
● 100% Avalanche tested
● Low input capacitance and gate charge
● Tight process control and high manufacturing yields
● Low gate input resistance
● -65 to 150°C Operating junction temperature range
ST Microelectronics
1 Pages / 0.15 MByte
ST Microelectronics
10 Pages / 0.75 MByte
ST Microelectronics
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ST Microelectronics
N-CHANNEL 500V - 0.3Ω - 12A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
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