TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.57 Ω |
Polarity | N-Channel |
Power Dissipation | 70 W |
Threshold Voltage | 4 V |
Drain to Source Voltage (Vds) | 600 V |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 577pF @50V(Vds) |
Input Power (Max) | 70 W |
Fall Time | 9.8 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 70W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.6 mm |
Size-Width | 6.2 mm |
Size-Height | 2.4 mm |
Operating Temperature | -55℃ ~ 150℃ |
The STD10NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● 100% Avalanche tested
● Low gate input resistance
● Extremely high dV/dt avalanche capabilities
ST Microelectronics
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N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
ST Microelectronics
STMICROELECTRONICS STD10NM60ND Power MOSFET, N Channel, 8A, 600V, 0.57Ω, 10V, 4V
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