| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.57 Ω |
| Polarity | N-Channel |
| Power Dissipation | 70 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 577pF @50V(Vds) |
| Input Power (Max) | 70 W |
| Fall Time | 9.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 70W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.6 mm |
| Size-Width | 6.2 mm |
| Size-Height | 2.4 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The STD10NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
● 100% Avalanche tested
● Low gate input resistance
● Extremely high dV/dt avalanche capabilities
ST Microelectronics
19 Pages / 1.19 MByte
ST Microelectronics
50 Pages / 1.2 MByte
ST Microelectronics
8 Pages / 0.16 MByte
ST Microelectronics
5 Pages / 0.04 MByte
ST Microelectronics
N-channel 600V, 0.53Ω, 10A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
ST Microelectronics
STMICROELECTRONICS STD10NM60ND Power MOSFET, N Channel, 8A, 600V, 0.57Ω, 10V, 4V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
