TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 3 Ω |
Polarity | P-Channel |
Power Dissipation | 85 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 500 V |
Rise Time | 15 ns |
Input Capacitance (Ciss) | 620pF @25V(Vds) |
Input Power (Max) | 70 W |
Fall Time | 26 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 70W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STD3PK50Z is a -500V P-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to a significant reduction in on resistance, the MOSFET is designed to ensure a high level of dv/dt capability for the most demanding applications.
● Gate charge minimized
● Extremely high dv/dt capability
● 100% Avalanche tested
● Very low intrinsic capacitance
● Improved ESD capability
● High peak power
● High ruggedness capability
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