| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 45 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 363pF @50V(Vds) |
| Input Power (Max) | 45 W |
| Fall Time | 12 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 45W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.4 mm |
| Size-Width | 9.35 mm |
| Size-Height | 4.6 mm |
| Operating Temperature | 150℃ (TJ) |
Increase the current or voltage in your circuit with this STD7ANM60N power MOSFET from STMicroelectronics. Its maximum power dissipation is 45000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This device utilizes mdmesh technology.
ST Microelectronics
21 Pages / 1.08 MByte
ST Microelectronics
18 Pages / 0.98 MByte
ST Microelectronics
20 Pages / 1.12 MByte
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