| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 53 ns |
| Input Power (Max) | 258 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The STGB30V60DF IGBT transistor from STMicroelectronics will work effectively even with higher currents. It has a maximum collector emitter voltage of 600 V. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C.
ST Microelectronics
22 Pages / 1.86 MByte
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 260000mW 3Pin(2+Tab) D2PAK T/R
ST Microelectronics
Trans IGBT Chip N-CH 600V 60A 3Pin D2PAK T/R
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