| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 20.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 60 W |
| Rise Time | 6.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 22 ns |
| Input Power (Max) | 65 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 60000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGP10NC60KD is a 600V short-circuit rugged IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in SMPS and PFC in both hard switch and resonant topologies. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
● Lower on-voltage drop
● Lower CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultra fast recovery anti-parallel diode
● 10µs Short-circuit withstand time
● Low VCE (sat) for reduced conduction losses
● Tight parameter distribution for design simplification and easy paralleling
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