| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 80.0 A |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0043 Ω |
| Polarity | N-Channel |
| Power Dissipation | 245 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 3.90 nF |
| Gate Charge | 61.0 nC |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 80.0 A |
| Rise Time | 160 ns |
| Input Capacitance (Ciss) | 3900pF @25V(Vds) |
| Input Power (Max) | 245 W |
| Fall Time | 29 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 245W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Width | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The FDP050AN06A0 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.
● Low Miller charge
● Low Qrr body diode
● UIS Capability (single pulse and repetitive pulse)
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