| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 15.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 56 W |
| Rise Time | 5.00 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 21 ns |
| Input Power (Max) | 56 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STGP6NC60HD is a very fast N-channel PowerMESH™ IGBT for use with SMPS and PFC in both hard switch and resonant topologies. Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBT with outstanding performances. The suffix H identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) maintaining a low voltage drop.
● Low on voltage drop (Vcesat)
● Low CRES/CIES ratio (no cross-conduction susceptibility)
● Very soft ultrafast recovery anti-parallel diode
● High frequency operation
ST Microelectronics
18 Pages / 0.4 MByte
ST Microelectronics
24 Pages / 0.89 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
IGBT Single Transistor, 15A, 2.5V, 56W, 600V, TO-220, 3Pins
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