| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | N-Channel |
| Power Dissipation | 125 W |
| Rise Time | 7 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 31 ns |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use the STGW19NC60WD IGBT transistor from STMicroelectronics as an electronic switch. It has a maximum collector emitter voltage of 600 V. Its maximum power dissipation is 125000 mW. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ST Microelectronics
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ST Microelectronics
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Trans IGBT Chip N-CH 600V 42A 140000mW 3Pin(3+Tab) TO-247 Tube
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ST Microelectronics
Trans IGBT Chip N-CH 600V 42A 125000mW 3Pin(3+Tab) TO-247 Tube
ST Microelectronics
Trans IGBT Chip N-CH 600V 42A 3Pin(3+Tab) TO-247 Tube
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