TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 600 V |
Current Rating | 10.0 A |
Case/Package | TO-220-3 |
Power Rating | 115 W |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.75 Ω |
Polarity | N-Channel |
Power Dissipation | 115 W |
Threshold Voltage | 3.75 V |
Drain to Source Voltage (Vds) | 600 V |
Breakdown Voltage (Drain to Source) | 600 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 10.0 A |
Rise Time | 20 ns |
Input Capacitance (Ciss) | 1370pF @25V(Vds) |
Input Power (Max) | 115 W |
Fall Time | 30 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 115000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP10NK60Z is a SuperMESH™ N-channel Power MOSFET offers Zener-protection and minimized gate charge. This Power MOSFET developed using STMicroelectronics" SuperMESH™ technology, achieved through optimization of ST"s well-established strip based PowerMESH™ layout. In addition to a significant reduction in ON-resistance, this device is designed to ensure a high level of dV/dt capability for the most demanding applications.
● Extremely high dV/dt capability
ST Microelectronics
19 Pages / 0.39 MByte
ST Microelectronics
20 Pages / 2.6 MByte
ST Microelectronics
24 Pages / 0.91 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.12 MByte
ST Microelectronics
Power MOSFET, N Channel, 10A, 600V, 0.65Ω, 10V, 3.75V
ST Microelectronics
N-CHANNEL 600V - 0.65Ω - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET
ST Microelectronics
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH TM Power MOSFET
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.