| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 200 V |
| Current Rating | 75.0 A |
| Case/Package | TO-220-3 |
| Power Dissipation | 190W (Tc) |
| Input Capacitance | 3.17 nF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Input Capacitance (Ciss) | 3260pF @25V(Vds) |
| Input Power (Max) | 190 W |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters
●■ Exceptional dv/dt capability
●■ Low gate charge
●■ 100% Avalanche tested
ST Microelectronics
16 Pages / 0.49 MByte
ST Microelectronics
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