TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 30.0 V |
Current Rating | 80.0 A |
Case/Package | TO-220-3 |
Power Rating | 300 W |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.004 Ω |
Polarity | N-Channel |
Power Dissipation | 300 W |
Threshold Voltage | 1 V |
Drain to Source Voltage (Vds) | 30 V |
Breakdown Voltage (Drain to Source) | 30 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 80.0 A |
Rise Time | 270 ns |
Input Capacitance (Ciss) | 5500pF @25V(Vds) |
Input Power (Max) | 300 W |
Fall Time | 95 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 300W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Size-Length | 10.4 mm |
Size-Width | 4.6 mm |
Size-Height | 9.15 mm |
Operating Temperature | 175℃ (TJ) |
The STP80NF03L-04 is a 30V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Exceptional dv/dt capability
● 100% Avalanche tested
● Low threshold drive
ST Microelectronics
8 Pages / 0.2 MByte
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11 Pages / 0.15 MByte
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ST Microelectronics
N-CHANNEL 30V - 0.0034Ω - 80A TO-220 STripFET POWER MOSFET
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