| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 1.00 kV |
| Current Rating | 6.50 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.85 Ω |
| Polarity | N-Channel |
| Power Dissipation | 160 W |
| Threshold Voltage | 3.75 V |
| Input Capacitance | 2.18 nF |
| Gate Charge | 73.0 nC |
| Drain to Source Voltage (Vds) | 1000 V |
| Breakdown Voltage (Drain to Source) | 1.00 kV |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 6.50 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 2180pF @25V(Vds) |
| Input Power (Max) | 160 W |
| Fall Time | 30 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 160W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STP8NK100Z is a 1000V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.
● Extremely high dv/dt capability
● 100% Avalanche tested
● Improved ESD capability
● Very low intrinsic capacitance
●ESD sensitive device, take proper precaution while handling the device.
ST Microelectronics
13 Pages / 0.28 MByte
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