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STW35N60DM2
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STW35N60DM2 Datasheet PDF - ST Microelectronics

Manufacturer:ST Microelectronics
Category:High Voltage MOS
Case Package:TO-247-3
Description:STMICROELECTRONICS STW35N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 28A, 600V, 0.094Ω, 10V, 4V
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STW35N60DM2 Datasheet PDF (26 Pages)
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STW35N60DM2 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)0.094 Ω
PolarityN-Channel
Power Dissipation210 W
Threshold Voltage4 V
Drain to Source Voltage (Vds)600 V
Rise Time17 ns
Input Capacitance (Ciss)2400pF @100V(Vds)
Fall Time10.7 ns
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)210W (Tc)

STW35N60DM2 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length15.75 mm
Size-Width5.15 mm
Size-Height20.15 mm
Operating Temperature-55℃ ~ 150℃ (TJ)

STW35N60DM2 Documents

STW35N60DM2 Other Datasheet PDF
ST Microelectronics
26 Pages / 0.29 MByte
STW35N60DM2 Packaging
ST Microelectronics
12 Pages / 0.68 MByte

STW35N60 Documents

STW35N60DM2 Datasheet PDF
ST Microelectronics
STMICROELECTRONICS STW35N60DM2 Power MOSFET, Mdmesh DM2, N Channel, 28A, 600V, 0.094Ω, 10V, 4V
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