| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -4.00 A |
| Case/Package | SOIC-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.07 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±16.0 V |
| Continuous Drain Current (Ids) | 4.00 A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 1350pF @25V(Vds) |
| Input Power (Max) | 2 W |
| Fall Time | 35 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Not Recommended for New Designs |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.25 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The STS4DPF30L is a dual P-channel STripFET™ Power MOSFET for battery management in nomadic equipment and DC-to-DC converter applications. This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
● Standard outline for easy automated surface-mount assembly
● Low threshold drive
ST Microelectronics
6 Pages / 0.1 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ST Microelectronics
STMICROELECTRONICS STS4DPF30L Dual MOSFET, Dual P Channel, 4A, -30V, 0.07Ω, 10V, 1V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
