| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 215 MHz |
| Number of Pins | 4 Pin |
| Case/Package | TO-261-4 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 4 Position |
| Polarity | NPN |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 3A |
| hFE Min | 200 @1A, 1V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN NSS40301MZ4T1G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 2000 mW. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.
ON Semiconductor
8 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
9 Pages / 0.53 MByte
ON Semiconductor
1 Pages / 0.13 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
