| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 30.0 A |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 135 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 313W (Tc) |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 2900pF @25V(Vds) |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 313W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tube |
| Size-Width | 5.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel 600V 30A (Tc) 313W (Tc) Through Hole TO-247-3
ST Microelectronics
9 Pages / 0.3 MByte
ST Microelectronics
18 Pages / 0.57 MByte
ST Microelectronics
N-channel 600V, 0.145Ω typ., 21A FDmesh(TM) II Power MOSFET (with fast diode) in TO-247 package
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