| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.108 Ω |
| Polarity | N-CH |
| Power Dissipation | 190 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 1781 pF |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 26A |
| Rise Time | 9.6 ns |
| Input Capacitance (Ciss) | 1781pF @100V(Vds) |
| Input Power (Max) | 190 W |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 190W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.75 mm |
| Size-Width | 5.15 mm |
| Size-Height | 20.15 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
In addition to amplifying electronic signals, you"ll be able to switch between various lines with the STW33N60M2 power MOSFET, developed by STMicroelectronics. Its maximum power dissipation is 190000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This N channel MOSFET transistor operates in enhancement mode. This device is made with mdmesh ii technology.
ST Microelectronics
20 Pages / 1.06 MByte
ST Microelectronics
54 Pages / 0.64 MByte
ST Microelectronics
19 Pages / 1.09 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
Trans MOSFET N-CH 600V 25A 3-Pin(3+Tab) TO-247 Tube
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
