| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -2.00 A |
| Case/Package | TO-220-3 |
| Output Voltage | 100 V |
| Output Current | 2 A |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 50 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Thermal Resistance | 62.5℃/W (RθJA) |
| hFE Min | 1000 @1A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 500 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| Input Voltage | 5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
With one of these PNP TIP117G Darlington transistors from ON Semiconductor, you"ll be able to process much higher current gain values within your circuit. This product"s maximum continuous DC collector current is 2 A, while its minimum DC current gain is 1000@1A@4 V|500@2A@4V. It has a maximum collector emitter saturation voltage of 2.5@8mA@2A V. This Darlington transistor array"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This Darlington transistor array has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 100 V and a maximum emitter base voltage of 5 V.
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