TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Frequency | 3 MHz |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | 3.00 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Polarity | PNP, P-Channel |
Power Dissipation | 40 W |
Gain Bandwidth Product | 3 MHz |
Breakdown Voltage (Collector to Emitter) | 60 V |
Thermal Resistance | 3.125℃/W (RθJC) |
Continuous Collector Current | 3A |
hFE Min | 10 @3A, 4V |
Input Power (Max) | 2 W |
DC Current Gain (hFE) | 50 |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 2000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Material | Silicon |
Size-Length | 10.28 mm |
Size-Width | 4.83 mm |
Size-Height | 15.75 mm |
Operating Temperature | -65℃ ~ 150℃ |
Look no further than ON Semiconductor"s PNP TIP32AG general purpose bipolar junction transistor, which can easily operate in high voltage ranges. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V.
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