| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -10.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 90 W |
| Breakdown Voltage (Collector to Base) | 100 V |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| hFE Min | 1000 @5A, 4V |
| Input Power (Max) | 90 W |
| DC Current Gain (hFE) | 1000 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 90000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.4 mm |
| Size-Width | 4.6 mm |
| Size-Height | 9.15 mm |
| Operating Temperature | 150℃ (TJ) |
The TIP147T is a PNP complementary power Darlington Transistor manufactured in Planar technology with "Base Island" layout and monolithic Darlington configuration. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
● Integrated anti-parallel collector-emitter diode
ST Microelectronics
8 Pages / 0.14 MByte
ST Microelectronics
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ST Microelectronics
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ST Microelectronics
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